Please use this identifier to cite or link to this item: http://hdl.handle.net/10266/2912
Title: Performance Analysis of Mixed CNT Bundle as VlSI Interconnects
Authors: Kaur, Amandeep
Rai, Mayank Kumar (Guide)
Keywords: Mixed CNT
Temperature Dependent CNT interconnect
VLSI interconnect
CNT
MWCNT
Issue Date: 14-Aug-2014
Abstract: Performance of a VLSI circuit is strongly influenced by Interconnect delay. As technology scaled down, interconnects delay dominates the gate delay. The present VLSI interconnect material i.e. copper (Cu) is facing various problems such as electro migration, surface scattering and grain boundary scattering as the technology is scaled down. These problems are severe and degrade the performance of Cu interconnect. Due to these reasons there is dire need for an alternative material to Cu interconnects which can perform better than it. Carbon nanotubes (CNTs) are one of the proposed alternatives to Cu interconnect which are susceptible to problems encountered due to technology scaling. Also they offer high thermal conductivity and large current carrying capacity over Cu. In this dissertation, temperature dependent performance analysis of mixed CNT bundle as a VLSI interconnect has been analyzed. The temperature dependent circuit parameters and performance analysis in terms of delay, power dissipation and power delay product (PDP) of mixed carbon nanotube (CNT) bundle interconnect with two different structures (MCB1 and MCB2) have been analyzed using an improved temperature dependent resistance model of single walled CNT (SWCNT) at 22nm technology. A similar analysis is carried out for single walled CNT (SWCNT) and multi walled CNT (MWCNT) bundle with conventional metal (copper) conductors and comparisons are made between results obtained through these analyses at 22nm technology node over a temperature range from 300K to 500K. The effects of various parameters such as interconnect length, diameter on propagation delay, power and PDP have also been analyzed. The SPICE simulation results reveal that at temperature variation ranging from 300 K to 500K, compared to bundle of SWCNT and MWCNT with copper interconnects, power delay product (PDP) in mixed CNT bundle of structure2 (MCB2), is low. Simulated results further reveal that with rise in temperature, MCB1 and MCB2 with tube diameter of dSWCNT=0.7nm and dMWCNT=2nm, perform better in terms of delay compared to other viz. SWCNT bundle, MWCNT bundle and copper. Based on these comparative results, an improved structure of mixed CNT bundle has been proposed as a better alternative to bundled SWCNT and MWCNT.
Description: MT, ECED
URI: http://hdl.handle.net/10266/2912
Appears in Collections:Masters Theses@ECED

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